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  september 2008 rev 5 1/16 16 std85n3lh5 STP85N3LH5 - stu85n3lh5 n-channel 30 v, 0.0042 ? , 80 a, dpak, to-220, ipak stripfet? v power mosfet features r ds(on) * q g industry benchmark extremely low on-resistance r ds(on) high avalanche ruggedness low gate drive power losses application switching applications description this product utilizes the 5 th generation of design rules of st?s proprietary stripfet? technology. the lowest available r ds(on) *q g , in the standard packages, makes this device suitable for the most demanding dc-dc converter applications, where high power density is to be achieved. figure 1. internal schematic diagram type v dss r ds(on) max i d std85n3lh5 30 v < 0.005 ? 80 a STP85N3LH5 30 v < 0.0054 ? 80 a stu85n3lh5 30 v < 0.0054 ? 80 a dpak 1 3 3 2 1 ipak 1 2 3 to-220 table 1. device summary order codes marking package packaging std85n3lh5 85n3lh5 dpak tape and reel STP85N3LH5 85n3lh5 to-220 tube stu85n3lh5 85n3lh5 ipak tube www.st.com
contents std85n3lh5 - st p85n3lh5 - stu85n3lh5 2/16 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
std85n3lh5 - STP85N3LH5 - stu85n3lh5 electrical ratings 3/16 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs = 0) 30 v v ds drain-source voltage (v gs = 0) @ t jmax 35 v v gs gate-source voltage 22 v i d (1) 1. limited by wire bonding drain current (continuous) at t c = 25 c 80 a i d drain current (continuous) at t c = 100 c 55 a i dm (2) 2. pulse width limited by safe operating area drain current (pulsed) 320 a p tot total dissipation at t c = 25 c 70 w derating factor 0.47 w/c e as (3) 3. starting tj = 25c, i d = 40 a, v dd = 25 v single pulse avalanche energy 165 mj t stg storage temperature -55 to 175 c t j max. operating junction temperature 175 c table 3. thermal resistance symbol parameter value unit r thj-case thermal resistance junction-case max 2.14 c/w r thj-amb thermal resistance junction-case max 100 c/w t j maximum lead temperature for soldering purpose 275 c
electrical characteristics std85n3lh5 - STP85N3LH5 - stu85n3lh5 4/16 2 electrical characteristics (t case = 25 c unless otherwise specified) table 4. static symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 30 v i dss zero gate voltage drain current (v gs = 0) v ds = 20 v v ds = 20 v,tc = 125 c 1 10 a a i gss gate body leakage current (v ds = 0) v gs = 22 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 12.5v r ds(on) static drain-source on resistance v gs = 10 v, i d = 40 a smd version 0.042 0.005 ? v gs = 10 v, i d = 40 a 0.0046 0.0054 ? v gs = 5 v, i d = 40 a smd version 0.0052 0.0065 ? v gs = 5 v, i d = 40 a 0.0058 0.0071 ? table 5. dynamic symbol parameter test conditions min typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25 v, f=1 mhz, v gs = 0 1850 380 58 pf pf pf q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 15 v, i d = 80 a v gs = 5 v (see figure 16) 14 6.8 4.7 nc nc nc q gs1 q gs2 pre v th gate-to-source charge post v th gate-to-source charge v dd = 15 v, i d = 80 a v gs = 5 v (see figure 19) 2.3 4.5 nc nc r g gate input resistance f = 1 mhz gate bias bias = 0 test signal level = 20 mv open drain 1.2 ?
std85n3lh5 - STP85N3LH5 - stu85n3lh5 electrical characteristics 5/16 table 6. switching on/off (inductive load) symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd = 15 v, i d = 40 a, r g = 4.7 ?, v gs = 5 v (see figure 15) 6 14 ns ns t d(off) t f turn-off delay time fall time v dd = 15 v, i d = 40 a, r g = 4.7 ?, v gs = 5 v (see figure 15) 23.6 10.8 ns ns table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area source-drain current source-drain current (pulsed) 80 320 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 40 a, v gs = 0 1.1 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 80 a, di/dt = 100 a/s, v dd = 20 v (see figure 17) 31.8 26.1 1.6 ns nc a
electrical characteristics std85n3lh5 - STP85N3LH5 - stu85n3lh5 6/16 2.1 electrical characterist ics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. normalized b vdss vs temperature figure 7. static drain-source on resistance
std85n3lh5 - STP85N3LH5 - stu85n3lh5 electrical characteristics 7/16 figure 8. gate charge vs gate-source voltage figure 9. capacitance variations figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on resistance vs temperature figure 12. source-drain diode forward characteristics
test circuit std85n3lh5 - STP85N3LH5 - stu85n3lh5 8/16 3 test circuit figure 13. unclamped inductive load test circuit figure 14. unclamped inductive waveform figure 15. switching times test circuit for resistive load figure 16. gate charge test circuit figure 17. test circuit for inductive load switching and diode recovery times figure 18. switching time waveform
std85n3lh5 - STP85N3LH5 - stu85n3lh5 test circuit 9/16 figure 19. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd
package mechanical data std85n3lh5 - STP85N3LH5 - stu85n3lh5 10/16 4 package mechanical data in order to meet environmental requirements, st offers these devices in ecopack? packages. these packages have a lead-free second level interconnect. the category of second level interconnect is marked on the package and on the inner box label, in compliance with jedec standard jesd97. the maximum ratings related to soldering conditions are also marked on the inner box label. ecopack is an st trademark. ecopack specifications are available at: www.st.com
std85n3lh5 - STP85N3LH5 - stu85n3lh5 package mechanical data 11/16 to-220 mechanical data dim mm inch min typ max min typ max a 4.40 4.60 0.17 3 0.1 8 1 b 0.61 0. 88 0.024 0.0 3 4 b 1 1.14 1.70 0.044 0.066 c0.4 8 0.70 0.01 9 0.027 d 15.25 15.75 0.6 0.62 d1 1.27 0.050 e 10 10.40 0. 393 0.40 9 e 2.40 2.70 0.0 9 4 0.106 e1 4. 9 5 5.15 0.1 9 4 0.202 f1.2 3 1. 3 2 0.04 8 0.051 h1 6.20 6.60 0.244 0.256 j1 2.40 2.72 0.0 9 4 0.107 l1 3 14 0.511 0.551 l1 3 .50 3 . 93 0.1 3 7 0.154 l20 16.40 0.645 l 3 02 8 . 9 0 1.1 3 7 ? p 3 .75 3 . 8 5 0.147 0.151 q2.65 2. 9 5 0.104 0.116
package mechanical data std85n3lh5 - STP85N3LH5 - stu85n3lh5 12/16 dim. mm. min. typ max. a 2.20 2.40 a1 0. 9 01.10 b 0.64 0. 9 0 b 2 0. 9 5 b 4 5.20 5.40 c 0.45 0.60 c2 0.4 8 0.60 d 6.00 6.20 e 6.40 6.60 e2.2 8 e1 4.40 4.60 h 16.10 l 9 .00 9 .40 (l1) 0. 8 01.20 l2 0. 8 0 v1 10 o to-251 (ipak) mechanical data 006 8 771_h
std85n3lh5 - STP85N3LH5 - stu85n3lh5 package mechanical data 13/16 dim. mm. min. typ max. a 2.20 2.40 a1 0. 9 01.10 a2 0.0 3 0.2 3 b 0.64 0. 9 0 b 4 5.20 5.40 c 0.45 0.60 c2 0.4 8 0.60 d 6.00 6.20 d1 5.10 e 6.40 6.60 e1 4.70 e2.2 8 e1 4.40 4.60 h 9 . 3 5 10.10 l1 l1 2. 8 0 l2 0. 8 0 l4 0.60 1 r0.20 v2 0 o 8 o to-252 (dpak) mechanical data 006 8 772_g
packaging mechanical data std85n3lh5 - STP85N3LH5 - stu85n3lh5 14/16 5 packaging mechanical data tape and reel shipment dpak footprint dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0.795 g 16.4 18.4 0.645 0.724 n 50 1.968 t 22.4 0.881 base qty bulk qty 2500 2500 reel mechanical data dim. mm inch min. max. min. max. a0 6.8 7 0.267 0.275 b0 10.4 10.6 0.409 0.417 b1 12.1 0.476 d 1.5 1.6 0.059 0.063 d1 1.5 0.059 e 1.65 1.85 0.065 0.073 f 7.4 7.6 0.291 0.299 k0 2.55 2.75 0.100 0.108 p0 3.9 4.1 0.153 0.161 p1 7.9 8.1 0.311 0.319 p2 1.9 2.1 0.075 0.082 r 40 1.574 w 15.7 16.3 0.618 0.641 tape mechanical data all dimensions are in millimeters
std85n3lh5 - STP85N3LH5 - stu85n3lh5 revision history 15/16 6 revision history table 8. document revision history date revision changes 19-oct-2007 1 first release 20-feb-2008 2 minor text changes to improve readability 21-jul-2008 3 ? added new package, mechanical data: to-220 ? figure 2: safe operating area has been corrected ? figure 7: static drain- source on resistance updated ? new value on table 2: absolute maximum ratings 20-aug-2008 4 added max value on v gs(th) ( table 4 ) 25-sep-2008 5 v gs values has been changed on table 2 and table 4
std85n3lh5 - STP85N3LH5 - stu85n3lh5 16/16 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by an authorized st representative, st products are not recommended, authorized or warranted for use in milita ry, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2008 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com


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